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CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet

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DELI ELECTRONICS TECHNOLOGY CO.,LTD

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CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet

Brand Name : CJ

Model Number : CJ2310 S10

Place of Origin : CHINA

MOQ : 3000 PCS

Price : Negotiation

Payment Terms : T/T, Western Union ， ESCROW

Supply Ability : 30000PCS

Delivery Time : STOCK

Packaging Details : 3000PCS/REEL

Drain-Source Voltage : 60V

Gate-Source Voltage : ±20V

Continuous Drain Current : 3A

Pulsed Drain Current (note 1) : 10A

Power Dissipation : 0.35W

Thermal Resistance from Junction to Ambient (note 2) : 357℃/W

Junction Temperature : 150℃

Storage Temperature : -55~+150℃

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CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS

DESCRIPTION

The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.

FEATURE 

High power and current handing capability 

Lead free product is acquired 

Surface mount package

APPLICATION 

Battery Switch 

DC/DC Converter

Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 3 A
Pulsed Drain Current (note 1) I DM 10 A
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient (note 2) R θJA 357 ℃/W
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55~+150 ℃

CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet

Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
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TEL:86-0755-82539981

Product Tags:

resistor equipped transistor

epitaxial planar pnp transistor

CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet Images

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